Optimization of the cavity facet coating in high power GaN-based semiconductor laser diodes

	Optimization of the cavity facet coating in high power GaN-based semiconductor laser diodes
	Feng, MX ; Zhang, SM ; Jiang, DS ; Wang, H ; Liu, JP ; Zeng, C ; Li, ZC ; Wang, HB ; Wang, F ; Yang, H
刊名	science china-technological sciences
	2012
卷号	55 期号:4 页码:883-887
学科主题	光电子学
收录类别	SCI
语种	英语
公开日期	2013-03-17
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/23670]
专题	半导体研究所_集成光电子学国家重点实验室
推荐引用方式 GB/T 7714	Feng, MX,Zhang, SM,Jiang, DS,et al. Optimization of the cavity facet coating in high power GaN-based semiconductor laser diodes[J]. science china-technological sciences,2012,55(4):883-887.
APA	Feng, MX.,Zhang, SM.,Jiang, DS.,Wang, H.,Liu, JP.,...&Yang, H.(2012).Optimization of the cavity facet coating in high power GaN-based semiconductor laser diodes.science china-technological sciences,55(4),883-887.
MLA	Feng, MX,et al."Optimization of the cavity facet coating in high power GaN-based semiconductor laser diodes".science china-technological sciences 55.4(2012):883-887.