Effect of High-Temperature Pregrowth Treatment on the Surface Morphology of GaInP Epilayers on Ge Grown by Metal-Organic Vapor-Phase Epitaxy | |
He, W ; Lu, SL ; Dong, JR ; Zhao, YM ; Yang, H | |
刊名 | japanese journal of applied physics |
2012 | |
卷号 | 51期号:1,part 1页码:15501 |
学科主题 | 半导体物理 |
收录类别 | SCI |
语种 | 英语 |
公开日期 | 2013-03-20 |
内容类型 | 期刊论文 |
源URL | [http://ir.semi.ac.cn/handle/172111/23746] |
专题 | 半导体研究所_半导体超晶格国家重点实验室 |
推荐引用方式 GB/T 7714 | He, W,Lu, SL,Dong, JR,et al. Effect of High-Temperature Pregrowth Treatment on the Surface Morphology of GaInP Epilayers on Ge Grown by Metal-Organic Vapor-Phase Epitaxy[J]. japanese journal of applied physics,2012,51(1,part 1):15501. |
APA | He, W,Lu, SL,Dong, JR,Zhao, YM,&Yang, H.(2012).Effect of High-Temperature Pregrowth Treatment on the Surface Morphology of GaInP Epilayers on Ge Grown by Metal-Organic Vapor-Phase Epitaxy.japanese journal of applied physics,51(1,part 1),15501. |
MLA | He, W,et al."Effect of High-Temperature Pregrowth Treatment on the Surface Morphology of GaInP Epilayers on Ge Grown by Metal-Organic Vapor-Phase Epitaxy".japanese journal of applied physics 51.1,part 1(2012):15501. |
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