Room-temperature ferromagnetism of Mn-doped InAs by a diffusion treatment | |
Dong, S ; Zhu, F ; Yang, GD | |
刊名 | optoelectronics and advanced materials-rapid communications
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2012 | |
卷号 | 6期号:1-2页码:174-177 |
学科主题 | 半导体物理 |
收录类别 | SCI |
语种 | 英语 |
公开日期 | 2013-03-17 |
内容类型 | 期刊论文 |
源URL | [http://ir.semi.ac.cn/handle/172111/23599] ![]() |
专题 | 半导体研究所_半导体超晶格国家重点实验室 |
推荐引用方式 GB/T 7714 | Dong, S,Zhu, F,Yang, GD. Room-temperature ferromagnetism of Mn-doped InAs by a diffusion treatment[J]. optoelectronics and advanced materials-rapid communications,2012,6(1-2):174-177. |
APA | Dong, S,Zhu, F,&Yang, GD.(2012).Room-temperature ferromagnetism of Mn-doped InAs by a diffusion treatment.optoelectronics and advanced materials-rapid communications,6(1-2),174-177. |
MLA | Dong, S,et al."Room-temperature ferromagnetism of Mn-doped InAs by a diffusion treatment".optoelectronics and advanced materials-rapid communications 6.1-2(2012):174-177. |
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