Determination of the series resistance under the Schottky contacts of AlGaN/AlN/GaN Schottky barrier diodes

	Determination of the series resistance under the Schottky contacts of AlGaN/AlN/GaN Schottky barrier diodes
	Cao, ZF ; Lin, ZJ ; Lu, YJ ; Luan, CB ; Yu, YX ; Chen, H ; Wang, ZG
刊名	chinese physics b
	2012
卷号	21 期号:1 页码:17103
学科主题	半导体器件
收录类别	SCI
语种	英语
公开日期	2013-03-20
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/23747]
专题	半导体研究所_中科院半导体材料科学重点实验室
推荐引用方式 GB/T 7714	Cao, ZF,Lin, ZJ,Lu, YJ,et al. Determination of the series resistance under the Schottky contacts of AlGaN/AlN/GaN Schottky barrier diodes[J]. chinese physics b,2012,21(1):17103.
APA	Cao, ZF.,Lin, ZJ.,Lu, YJ.,Luan, CB.,Yu, YX.,...&Wang, ZG.(2012).Determination of the series resistance under the Schottky contacts of AlGaN/AlN/GaN Schottky barrier diodes.chinese physics b,21(1),17103.
MLA	Cao, ZF,et al."Determination of the series resistance under the Schottky contacts of AlGaN/AlN/GaN Schottky barrier diodes".chinese physics b 21.1(2012):17103.