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	Rhenium-Doped and Stabilized MoS2 Atomic Layers with Basal-Plane Catalytic Activity
	Yang, Shi-Ze; Gong, Yongji; Manchanda, Priyanka; Zhang, Yu-Yang; Ye, Gonglan; Chen, Shuangming; Song, Li; Pantelides, Sokrates T.; Ajayan, Pulickel M.; Chisholm, Matthew F.
刊名	ADVANCED MATERIALS
	2018
卷号	30页码:e1803477
关键词	density functional theory electrocatalysis hydrogen evolution reaction scanning transmission electron microscopy transition metal dichalcogenides
ISSN号	0935-9648
DOI	10.1002/adma.201803477
URL标识	查看原文
收录类别	SCIE ; PUBMED
WOS记录号	WOS:000453926000027
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/5929189
专题	北京航空航天大学
推荐引用方式 GB/T 7714	Yang, Shi-Ze,Gong, Yongji,Manchanda, Priyanka,et al. Rhenium-Doped and Stabilized MoS2 Atomic Layers with Basal-Plane Catalytic Activity[J]. ADVANCED MATERIALS,2018,30:e1803477.
APA	Yang, Shi-Ze.,Gong, Yongji.,Manchanda, Priyanka.,Zhang, Yu-Yang.,Ye, Gonglan.,...&Zhou, Wu.(2018).Rhenium-Doped and Stabilized MoS2 Atomic Layers with Basal-Plane Catalytic Activity.ADVANCED MATERIALS,30,e1803477.
MLA	Yang, Shi-Ze,et al."Rhenium-Doped and Stabilized MoS2 Atomic Layers with Basal-Plane Catalytic Activity".ADVANCED MATERIALS 30(2018):e1803477.

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