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	A piezoelectric, strain-controlled antiferromagnetic memory insensitive to magnetic fields
	Yan, Han; Feng, Zexin; Shang, Shunli; Wang, Xiaoning; Hu, Zexiang; Wang, Jinhua; Zhu, Zengwei; Wang, Hui; Chen, Zuhuang; Hua, Hui
刊名	NATURE NANOTECHNOLOGY
	2019
卷号	14页码:131-+
关键词	article electric field human human experiment induced resistance magnetic field memory room temperature
ISSN号	1748-3387
DOI	10.1038/s41565-018-0339-0
URL标识	查看原文
收录类别	SCIE ; PUBMED
WOS记录号	WOS:000457765800013
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/5922445
专题	北京航空航天大学
推荐引用方式 GB/T 7714	Yan, Han,Feng, Zexin,Shang, Shunli,et al. A piezoelectric, strain-controlled antiferromagnetic memory insensitive to magnetic fields[J]. NATURE NANOTECHNOLOGY,2019,14:131-+.
APA	Yan, Han.,Feng, Zexin.,Shang, Shunli.,Wang, Xiaoning.,Hu, Zexiang.,...&Liu, Zhiqi.(2019).A piezoelectric, strain-controlled antiferromagnetic memory insensitive to magnetic fields.NATURE NANOTECHNOLOGY,14,131-+.
MLA	Yan, Han,et al."A piezoelectric, strain-controlled antiferromagnetic memory insensitive to magnetic fields".NATURE NANOTECHNOLOGY 14(2019):131-+.

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