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	Junction Temperature Extraction Methods for Si and SiC Power Devices-a Review and Possible Alternatives [Si和SiC功率器件结温提取技术现状及展望]
	Wang, L.; Deng, J.; Yang, J.; Li, W.
刊名	Diangong Jishu Xuebao/Transactions of China Electrotechnical Society
	2019
卷号	34页码:703-716
关键词	Extraction Junction gate field effect transistors Semiconductor junctions Silicon Silicon carbide Wide band gap semiconductors Health assessments Intelligent switching Junction temperatures Measuring frequency Online extraction Reverse breakdown voltage Temperature characteristic Temperature sensitive Power semiconductor devices
ISSN号	10006753
DOI	10.19595/j.cnki.1000-6753.tces.180296
URL标识	查看原文
收录类别	EI
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/5920110
专题	北京航空航天大学
推荐引用方式 GB/T 7714	Wang, L.,Deng, J.,Yang, J.,等. Junction Temperature Extraction Methods for Si and SiC Power Devices-a Review and Possible Alternatives [Si和SiC功率器件结温提取技术现状及展望][J]. Diangong Jishu Xuebao/Transactions of China Electrotechnical Society,2019,34:703-716.
APA	Wang, L.,Deng, J.,Yang, J.,&Li, W..(2019).Junction Temperature Extraction Methods for Si and SiC Power Devices-a Review and Possible Alternatives [Si和SiC功率器件结温提取技术现状及展望].Diangong Jishu Xuebao/Transactions of China Electrotechnical Society,34,703-716.
MLA	Wang, L.,et al."Junction Temperature Extraction Methods for Si and SiC Power Devices-a Review and Possible Alternatives [Si和SiC功率器件结温提取技术现状及展望]".Diangong Jishu Xuebao/Transactions of China Electrotechnical Society 34(2019):703-716.

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