| A Boolean OR gate implemented with an optoelectronic switching memristor | |
| Zhao, Jianhui; Zhou, Zhenyu; Wang, Hong; Wang, Jingjuan; Hao, Weichang; Ren, Deliang; Guo, Rui; Chen, Jingsheng; Liu, Baoting; Yan, Xiaobing | |
| 刊名 | APPLIED PHYSICS LETTERS
 |
| 2019 | |
| 卷号 | 115 |
| ISSN号 | 0003-6951 |
| DOI | 10.1063/1.5120352 |
| URL标识 | 查看原文 |
| 收录类别 | SCIE |
| WOS记录号 | WOS:000492035500018 |
| 内容类型 | 期刊论文 |
| URI标识 | http://www.corc.org.cn/handle/1471x/5916621 |
| 专题 | 北京航空航天大学 |
| 推荐引用方式 GB/T 7714 | Zhao, Jianhui,Zhou, Zhenyu,Wang, Hong,et al. A Boolean OR gate implemented with an optoelectronic switching memristor[J]. APPLIED PHYSICS LETTERS,2019,115. |
| APA | Zhao, Jianhui.,Zhou, Zhenyu.,Wang, Hong.,Wang, Jingjuan.,Hao, Weichang.,...&Yan, Xiaobing.(2019).A Boolean OR gate implemented with an optoelectronic switching memristor.APPLIED PHYSICS LETTERS,115. |
| MLA | Zhao, Jianhui,et al."A Boolean OR gate implemented with an optoelectronic switching memristor".APPLIED PHYSICS LETTERS 115(2019). |
| 个性服务 |
| 查看访问统计 |
| 相关权益政策 |
| 暂无数据 |
| 收藏/分享 |
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。
修改评论