Contribution of GaN template to the unexpected Ga atoms incorporated into AlInN epilayers grown under an indium-very-rich condition by metalorganic chemical vapor deposition (MOCVD)

	Contribution of GaN template to the unexpected Ga atoms incorporated into AlInN epilayers grown under an indium-very-rich condition by metalorganic chemical vapor deposition (MOCVD)
	Zhu, JJ ; Fan, YM ; Zhang, H ; Lu, GJ ; Wang, H ; Zhao, DG ; Jiang, DS ; Liu, ZS ; Zhang, SM ; Chen, GF ; Zhang, BS ; Yang, H
刊名	journal of crystal growth
	2012
卷号	348 期号:1 页码:25-30
学科主题	光电子学
收录类别	SCI
语种	英语
公开日期	2013-02-27
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/23566]
专题	半导体研究所_集成光电子学国家重点实验室
推荐引用方式 GB/T 7714	Zhu, JJ,Fan, YM,Zhang, H,et al. Contribution of GaN template to the unexpected Ga atoms incorporated into AlInN epilayers grown under an indium-very-rich condition by metalorganic chemical vapor deposition (MOCVD)[J]. journal of crystal growth,2012,348(1):25-30.
APA	Zhu, JJ.,Fan, YM.,Zhang, H.,Lu, GJ.,Wang, H.,...&Yang, H.(2012).Contribution of GaN template to the unexpected Ga atoms incorporated into AlInN epilayers grown under an indium-very-rich condition by metalorganic chemical vapor deposition (MOCVD).journal of crystal growth,348(1),25-30.
MLA	Zhu, JJ,et al."Contribution of GaN template to the unexpected Ga atoms incorporated into AlInN epilayers grown under an indium-very-rich condition by metalorganic chemical vapor deposition (MOCVD)".journal of crystal growth 348.1(2012):25-30.