Ge-70 nanocrystals in SiO2 films under neutron irradiation: A Raman and photoluminescence study

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	Ge-70 nanocrystals in SiO2 films under neutron irradiation: A Raman and photoluminescence study
	L. Fan ; T. Lu ; Q. Chen ; Y. Hu ; S. Dun ; Q. Hu ; C. You ; S. Zhang ; B. Tang ; J. Dai
刊名	Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions with Materials and Atoms
	2012
卷号	286 页码:287-290
关键词	Ion-implantation Neutron irradiation Nanocrystalline materials Photoluminescence ge nanocrystals sio2 matrix semiconductors crystalline mechanism spectra
ISSN号	0168-583X
中文摘要	Ge-70 isotopic nanocrystals embedded in SiO2 films were prepared by ion-implantation and neutron irradiation. Laser Raman scattering (LRS) and photoluminescence (PL) spectra were employed to characterize the samples. After Ge-70(+) ions with the dose of 3 x 10(16) cm(-2) and the energy of 150 keV were implanted with subsequent annealing, the Raman peak of Ge-70 nanocrystals is shown at around 305 cm(-1) due to isotopic effect. It blueshifts to higher wave numbers and the FWHM becomes narrower with increasing annealed temperature. However, The PL peak at 565 nm from nanocrystals is not exhibited before neutron irradiation due to the quenching of the GeO4 tetrahedra, instead of GeO2 due to Ge insufficiency. A Raman peak position 262 cm(-1) corresponding to GeO4 tetrahedra, was formed after ion-implantation and could be annihilated by neutron irradiation and subsequent annealing, which help improve the luminescent property of Ge nanocrystals. (C) 2012 Elsevier B.V. All rights reserved.
原文出处	://WOS:000309488300055
公开日期	2013-02-05
内容类型	期刊论文
源URL	[http://ir.imr.ac.cn/handle/321006/59936]
专题	金属研究所_中国科学院金属研究所
推荐引用方式 GB/T 7714	L. Fan,T. Lu,Q. Chen,et al. Ge-70 nanocrystals in SiO2 films under neutron irradiation: A Raman and photoluminescence study[J]. Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions with Materials and Atoms,2012,286:287-290.
APA	L. Fan.,T. Lu.,Q. Chen.,Y. Hu.,S. Dun.,...&J. Dai.(2012).Ge-70 nanocrystals in SiO2 films under neutron irradiation: A Raman and photoluminescence study.Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions with Materials and Atoms,286,287-290.
MLA	L. Fan,et al."Ge-70 nanocrystals in SiO2 films under neutron irradiation: A Raman and photoluminescence study".Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions with Materials and Atoms 286(2012):287-290.