Resistive switching behaviors and memory logic functions in single MnOx nanorod modulated by moisture | |
Zhou, Guangdong; Sun, Bai; Ren, Zhijun; Wang, Lidan; Xu, Cunyun; Wu, Bo; Li, Ping; Yao, Yanqing; Duan, Shukai | |
2019 | |
卷号 | 55期号:67页码:9915-9918 |
URL标识 | 查看原文 |
WOS记录号 | WOS:000481528300029 |
内容类型 | 期刊论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/5836543 |
专题 | 贵州理工学院 |
作者单位 | 1.[1]Guizhou Inst Technol, Sch Sci, Guiyang 55003, Guizhou, Peoples R China 2.[2]Southwest Univ, Sch Artificial Intelligence, Chongqing 400715, Peoples R China 3.[3]Southwest Jiaotong Univ, Sch Phys Sci & Technol, Chengdu 610031, Sichuan, Peoples R China 4.[4]Zunyi Normal Coll, Sch Phys & Elect Sci, Zunyi 563002, Peoples R China |
推荐引用方式 GB/T 7714 | Zhou, Guangdong,Sun, Bai,Ren, Zhijun,et al. Resistive switching behaviors and memory logic functions in single MnOx nanorod modulated by moisture[J],2019,55(67):9915-9918. |
APA | Zhou, Guangdong.,Sun, Bai.,Ren, Zhijun.,Wang, Lidan.,Xu, Cunyun.,...&Duan, Shukai.(2019).Resistive switching behaviors and memory logic functions in single MnOx nanorod modulated by moisture.,55(67),9915-9918. |
MLA | Zhou, Guangdong,et al."Resistive switching behaviors and memory logic functions in single MnOx nanorod modulated by moisture".55.67(2019):9915-9918. |
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