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Resistive switching behaviors and memory logic functions in single MnOx nanorod modulated by moisture
Zhou, Guangdong; Sun, Bai; Ren, Zhijun; Wang, Lidan; Xu, Cunyun; Wu, Bo; Li, Ping; Yao, Yanqing; Duan, Shukai
2019
卷号55期号:67页码:9915-9918
URL标识查看原文
WOS记录号WOS:000481528300029
内容类型期刊论文
URI标识http://www.corc.org.cn/handle/1471x/5836543
专题贵州理工学院
作者单位1.[1]Guizhou Inst Technol, Sch Sci, Guiyang 55003, Guizhou, Peoples R China
2.[2]Southwest Univ, Sch Artificial Intelligence, Chongqing 400715, Peoples R China
3.[3]Southwest Jiaotong Univ, Sch Phys Sci & Technol, Chengdu 610031, Sichuan, Peoples R China
4.[4]Zunyi Normal Coll, Sch Phys & Elect Sci, Zunyi 563002, Peoples R China
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GB/T 7714
Zhou, Guangdong,Sun, Bai,Ren, Zhijun,et al. Resistive switching behaviors and memory logic functions in single MnOx nanorod modulated by moisture[J],2019,55(67):9915-9918.
APA Zhou, Guangdong.,Sun, Bai.,Ren, Zhijun.,Wang, Lidan.,Xu, Cunyun.,...&Duan, Shukai.(2019).Resistive switching behaviors and memory logic functions in single MnOx nanorod modulated by moisture.,55(67),9915-9918.
MLA Zhou, Guangdong,et al."Resistive switching behaviors and memory logic functions in single MnOx nanorod modulated by moisture".55.67(2019):9915-9918.
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