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Memory characteristics and tunneling mechanism of Pt nano-crystals embedded in HfAlOx films for nonvolatile flash memory devices
Zhou, Guangdong; wu, Bo; Li, Zhiling; Xiao, Zhijun; Li, Shuhui; Li, Ping
2015
卷号15期号:3页码:279-284
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WOS记录号WOS:000349904900021
内容类型期刊论文
URI标识http://www.corc.org.cn/handle/1471x/5836186
专题贵州理工学院
作者单位1.[1]Guizhou Inst Technol, Guizhou 550003, Peoples R China
2.[2]Southwest Univ, Inst Clean Energy & Adv Mat, Chongqing 400715, Peoples R China
3.[3]Zunyi Normal Coll, Inst Theoret Phys, Zunyi 563002, Peoples R China
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GB/T 7714
Zhou, Guangdong,wu, Bo,Li, Zhiling,et al. Memory characteristics and tunneling mechanism of Pt nano-crystals embedded in HfAlOx films for nonvolatile flash memory devices[J],2015,15(3):279-284.
APA Zhou, Guangdong,wu, Bo,Li, Zhiling,Xiao, Zhijun,Li, Shuhui,&Li, Ping.(2015).Memory characteristics and tunneling mechanism of Pt nano-crystals embedded in HfAlOx films for nonvolatile flash memory devices.,15(3),279-284.
MLA Zhou, Guangdong,et al."Memory characteristics and tunneling mechanism of Pt nano-crystals embedded in HfAlOx films for nonvolatile flash memory devices".15.3(2015):279-284.
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