Memory characteristics and tunneling mechanism of Pt nano-crystals embedded in HfAlOx films for nonvolatile flash memory devices | |
Zhou, Guangdong; wu, Bo; Li, Zhiling; Xiao, Zhijun; Li, Shuhui; Li, Ping | |
2015 | |
卷号 | 15期号:3页码:279-284 |
URL标识 | 查看原文 |
WOS记录号 | WOS:000349904900021 |
内容类型 | 期刊论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/5836186 |
专题 | 贵州理工学院 |
作者单位 | 1.[1]Guizhou Inst Technol, Guizhou 550003, Peoples R China 2.[2]Southwest Univ, Inst Clean Energy & Adv Mat, Chongqing 400715, Peoples R China 3.[3]Zunyi Normal Coll, Inst Theoret Phys, Zunyi 563002, Peoples R China |
推荐引用方式 GB/T 7714 | Zhou, Guangdong,wu, Bo,Li, Zhiling,et al. Memory characteristics and tunneling mechanism of Pt nano-crystals embedded in HfAlOx films for nonvolatile flash memory devices[J],2015,15(3):279-284. |
APA | Zhou, Guangdong,wu, Bo,Li, Zhiling,Xiao, Zhijun,Li, Shuhui,&Li, Ping.(2015).Memory characteristics and tunneling mechanism of Pt nano-crystals embedded in HfAlOx films for nonvolatile flash memory devices.,15(3),279-284. |
MLA | Zhou, Guangdong,et al."Memory characteristics and tunneling mechanism of Pt nano-crystals embedded in HfAlOx films for nonvolatile flash memory devices".15.3(2015):279-284. |
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