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	Temperature-dependent low-frequency noise in indium-zinc-oxide thin-film transistors down to 10 K
	Liu, Yuan; He, Hongyu; Chen, Ya-Yi; Chen, Rongsheng*; Wang, Li; Cai, Shuting*; Xiong, Xiaoming
刊名	IEEE Transactions on Electron Devices
	2019
卷号	66期号:5页码:2192-2197
关键词	Indium-zinc-oxide (IZO) low-frequency noise (LFN) temperature thin-film transistor (TFT)
ISSN号	0018-9383
DOI	10.1109/TED.2019.2902449
URL标识	查看原文
WOS记录号	WOS:000466028500022
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/5678979
专题	南华大学
作者单位	1.[Liu, Yuan 2.Xiong, Xiaoming 3.Cai, Shuting] Guangdong Univ Technol, Sch Automat, Guangzhou 510006, Guangdong, Peoples R China.
推荐引用方式 GB/T 7714	Liu, Yuan,He, Hongyu,Chen, Ya-Yi,et al. Temperature-dependent low-frequency noise in indium-zinc-oxide thin-film transistors down to 10 K[J]. IEEE Transactions on Electron Devices,2019,66(5):2192-2197.
APA	Liu, Yuan.,He, Hongyu.,Chen, Ya-Yi.,Chen, Rongsheng*.,Wang, Li.,...&Xiong, Xiaoming.(2019).Temperature-dependent low-frequency noise in indium-zinc-oxide thin-film transistors down to 10 K.IEEE Transactions on Electron Devices,66(5),2192-2197.
MLA	Liu, Yuan,et al."Temperature-dependent low-frequency noise in indium-zinc-oxide thin-film transistors down to 10 K".IEEE Transactions on Electron Devices 66.5(2019):2192-2197.

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