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	Deposition of silicon carbon nitride thin films by microwave ECR plasma enhanced unbalance magnetron sputtering
	Gao, Peng; Xu, Jun; Piao, Yong; Ding, Wanyu; Wang, Dehe; Deng, Xinlu; Dong, Chuang
刊名	5th Asian/European International Conference on Plasma Surface Engineering
	2007
卷号	201页码:5298-5301
关键词	silicon carbon nitride ECR magnetron sputtering
ISSN号	0257-8972
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/5671024
专题	大连理工大学
作者单位	Dalian Univ Technol, State Key Lab Mat Modificat Laser Ion & Electron, Dalian 116024, Peoples R China.
推荐引用方式 GB/T 7714	Gao, Peng,Xu, Jun,Piao, Yong,et al. Deposition of silicon carbon nitride thin films by microwave ECR plasma enhanced unbalance magnetron sputtering[J]. 5th Asian/European International Conference on Plasma Surface Engineering,2007,201:5298-5301.
APA	Gao, Peng.,Xu, Jun.,Piao, Yong.,Ding, Wanyu.,Wang, Dehe.,...&Dong, Chuang.(2007).Deposition of silicon carbon nitride thin films by microwave ECR plasma enhanced unbalance magnetron sputtering.5th Asian/European International Conference on Plasma Surface Engineering,201,5298-5301.
MLA	Gao, Peng,et al."Deposition of silicon carbon nitride thin films by microwave ECR plasma enhanced unbalance magnetron sputtering".5th Asian/European International Conference on Plasma Surface Engineering 201(2007):5298-5301.

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