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Simulation on dielectric susceptibility and domain evolution of relaxor ferroelectrics
Zhang YF; Wang CL; Li HC; Zhao ML; Zhang HL
刊名Physica, B. Condensed Matter
2008
卷号403期号:17页码:2822-2827
关键词dielectric susceptibility domain evolution Potts-Ising model Monte Carlo GRAIN-GROWTH BEHAVIOR POLARIZATION CERAMICS METALS MODEL
DOI10.1016/j.physb.2008.02.011
URL标识查看原文
内容类型期刊论文
URI标识http://www.corc.org.cn/handle/1471x/5573236
专题山东大学
作者单位1.State Key Laboratory of Crystal Materials, School of Physics and Microelectronics, Shandong University, Jinan, 250100, China
2.S
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GB/T 7714
Zhang YF,Wang CL,Li HC,et al. Simulation on dielectric susceptibility and domain evolution of relaxor ferroelectrics[J]. Physica, B. Condensed Matter,2008,403(17):2822-2827.
APA Zhang YF,Wang CL,Li HC,Zhao ML,&Zhang HL.(2008).Simulation on dielectric susceptibility and domain evolution of relaxor ferroelectrics.Physica, B. Condensed Matter,403(17),2822-2827.
MLA Zhang YF,et al."Simulation on dielectric susceptibility and domain evolution of relaxor ferroelectrics".Physica, B. Condensed Matter 403.17(2008):2822-2827.
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