| Structural and electrical properties of K0.5Bi0.5TiO3 thin films for ferroelectric field effect transistor applications | |
| Jing XY; Huang BB; Zhang XY; Qin XY; Wei JY; Wang XN; Yao SS; Xu ZH; Wang ZY; Wang P | |
| 刊名 | Journal of Physics, D. Applied Physics: A Europhysics Journal
 |
| 2009 | |
| 期号 | 4页码:45421-1-45421-5-0 |
| 关键词 | SOL-GEL METHOD SEMICONDUCTOR STRUCTURE SI SILICON |
| URL标识 | 查看原文 |
| 内容类型 | 期刊论文 |
| URI标识 | http://www.corc.org.cn/handle/1471x/5528820 |
| 专题 | 山东大学 |
| 作者单位 | Shandong Univ, State Key Lab Crystal Mat |
| 推荐引用方式 GB/T 7714 | Jing XY,Huang BB,Zhang XY,et al. Structural and electrical properties of K0.5Bi0.5TiO3 thin films for ferroelectric field effect transistor applications[J]. Journal of Physics, D. Applied Physics: A Europhysics Journal,2009(4):45421-1-45421-5-0. |
| APA | Jing XY.,Huang BB.,Zhang XY.,Qin XY.,Wei JY.,...&Wang P.(2009).Structural and electrical properties of K0.5Bi0.5TiO3 thin films for ferroelectric field effect transistor applications.Journal of Physics, D. Applied Physics: A Europhysics Journal(4),45421-1-45421-5-0. |
| MLA | Jing XY,et al."Structural and electrical properties of K0.5Bi0.5TiO3 thin films for ferroelectric field effect transistor applications".Journal of Physics, D. Applied Physics: A Europhysics Journal .4(2009):45421-1-45421-5-0. |
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