| Intra-acceptor hole relaxation in Be delta-doped GaAs/AlAs multiple quantum wells | |
| Li Su-Mei; Zheng Wei-Min; Song Ying-Xin; Liu Jing; Chu Ning-Ning | |
| 刊名 | CHINESE PHYSICS B
 |
| 2009 | |
| 卷号 | 18期号:9页码:3975-3979 |
| 关键词 | carrier relaxation multiple quantum well intra-acceptor dynamics pump-probe |
| DOI | 10.1088/1674-1056/18/9/059 |
| URL标识 | 查看原文 |
| 内容类型 | 期刊论文 |
| URI标识 | http://www.corc.org.cn/handle/1471x/5524233 |
| 专题 | 山东大学 |
| 作者单位 | 1.School of Space Science and Physics,Shandong University at Weihai, Weihai, Shandong 264209, China. 2.School of Space Science |
| 推荐引用方式 GB/T 7714 | Li Su-Mei,Zheng Wei-Min,Song Ying-Xin,et al. Intra-acceptor hole relaxation in Be delta-doped GaAs/AlAs multiple quantum wells[J]. CHINESE PHYSICS B,2009,18(9):3975-3979. |
| APA | Li Su-Mei,Zheng Wei-Min,Song Ying-Xin,Liu Jing,&Chu Ning-Ning.(2009).Intra-acceptor hole relaxation in Be delta-doped GaAs/AlAs multiple quantum wells.CHINESE PHYSICS B,18(9),3975-3979. |
| MLA | Li Su-Mei,et al."Intra-acceptor hole relaxation in Be delta-doped GaAs/AlAs multiple quantum wells".CHINESE PHYSICS B 18.9(2009):3975-3979. |
| 个性服务 |
| 查看访问统计 |
| 相关权益政策 |
| 暂无数据 |
| 收藏/分享 |
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。
修改评论