| Intra-acceptor hole relaxation in Be δ-doped GaAs/AlAs multiple quantum wells | |
| Li SM(李素梅); Zheng WM(郑卫民); Song YX(宋迎新); Liu J(刘静); Chu NN(初宁宁) | |
| 刊名 | Chinese Physics B
 |
| 2009 | |
| 期号 | 09页码:3975-3979 |
| 关键词 | carrier relaxation multiple quantum well intra-acceptor dynamics pump-probe |
| URL标识 | 查看原文 |
| 内容类型 | 期刊论文 |
| URI标识 | http://www.corc.org.cn/handle/1471x/5520751 |
| 专题 | 山东大学 |
| 作者单位 | 1.School of Space Science and Physics,Shandong University at Weihai 2.School of Inform |
| 推荐引用方式 GB/T 7714 | Li SM,Zheng WM,Song YX,et al. Intra-acceptor hole relaxation in Be δ-doped GaAs/AlAs multiple quantum wells[J]. Chinese Physics B,2009(09):3975-3979. |
| APA | Li SM,Zheng WM,Song YX,Liu J,&Chu NN.(2009).Intra-acceptor hole relaxation in Be δ-doped GaAs/AlAs multiple quantum wells.Chinese Physics B(09),3975-3979. |
| MLA | Li SM,et al."Intra-acceptor hole relaxation in Be δ-doped GaAs/AlAs multiple quantum wells".Chinese Physics B .09(2009):3975-3979. |
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