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	Influence of the upper waveguide layer thickness on optical field in asymmetric heterostructure quantum well laser diode
	Li, Peixu; Jiang, Kai; Li, Shuqiang; Xia, Wei; Zhang, Xin; Tang, Qingmin; Ren, Zhongxiang; Xu, Xiangang
刊名	CHINESE OPTICS LETTERS
	2010
卷号	8期号:5页码:493-495
DOI	10.3788/COL20100805.0493
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/5494358
专题	山东大学
作者单位	1.Shandong Univ, State Key Lab Crystal Mat, Jinan 250100, Peoples R China. 2.[Li, Peixu
推荐引用方式 GB/T 7714	Li, Peixu,Jiang, Kai,Li, Shuqiang,et al. Influence of the upper waveguide layer thickness on optical field in asymmetric heterostructure quantum well laser diode[J]. CHINESE OPTICS LETTERS,2010,8(5):493-495.
APA	Li, Peixu.,Jiang, Kai.,Li, Shuqiang.,Xia, Wei.,Zhang, Xin.,...&Xu, Xiangang.(2010).Influence of the upper waveguide layer thickness on optical field in asymmetric heterostructure quantum well laser diode.CHINESE OPTICS LETTERS,8(5),493-495.
MLA	Li, Peixu,et al."Influence of the upper waveguide layer thickness on optical field in asymmetric heterostructure quantum well laser diode".CHINESE OPTICS LETTERS 8.5(2010):493-495.

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