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	Excited-state lifetime measurement of silicon vacancy centers in diamond by single-photon frequency upconversion
	Rong, YY; Ma, JH; Chen, LX; Liu, Y; Siyushev, P; Wu, BT; Pan, HF; Jelezko, F; Wu, E; Zeng, HP
刊名	LASER PHYSICS
	2018
卷号	Vol.28 No.5
关键词	silicon vacancy center in diamond single-photon frequency upconversion excited-state lifetime
ISSN号	1054-660x;1555-6611
URL标识	查看原文
公开日期	[db:dc_date_available]
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/5464333
专题	湖南大学
作者单位	1.East China Normal Univ, State Key Lab Precis Spect, Shanghai 200062, Peoples R China 2.Univ Ulm, Inst Quantum Opt, Albert Einstein Allee 11, D-89081 Ulm, Germany 3.Shanxi Univ, Collaborat Innovat Ctr Extreme Opt, Taiyuan 030006, Shanxi, Peoples R China
推荐引用方式 GB/T 7714	Rong, YY,Ma, JH,Chen, LX,et al. Excited-state lifetime measurement of silicon vacancy centers in diamond by single-photon frequency upconversion[J]. LASER PHYSICS,2018,Vol.28 No.5.
APA	Rong, YY.,Ma, JH.,Chen, LX.,Liu, Y.,Siyushev, P.,...&Zeng, HP.(2018).Excited-state lifetime measurement of silicon vacancy centers in diamond by single-photon frequency upconversion.LASER PHYSICS,Vol.28 No.5.
MLA	Rong, YY,et al."Excited-state lifetime measurement of silicon vacancy centers in diamond by single-photon frequency upconversion".LASER PHYSICS Vol.28 No.5(2018).

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