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	Low specific on-resistance GaN-based vertical heterostructure field effect transistors with nonuniform doping superjunctions.
	Wei Mao; Hai-Yong Wang; Peng-Hao Shi; Xiao-Fei Wang; Ming Du; Xue-Feng Zheng; Chong Wang; Xiao-Hua Ma; Jin-Cheng Zhang; Yue Hao
会议名称	CHINESE PHYSICS B
会议日期	2018
关键词	GALLIUM nitride *HETEROSTRUCTURES *FIELD-effect transistors *DOPING agents (Chemistry) *CHEMICAL reduction
会议录	Vol.27 No.4
URL标识	查看原文
内容类型	会议论文
URI标识	http://www.corc.org.cn/handle/1471x/5451747
专题	湖南大学
作者单位	1.Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi’an 710071, China 2.School of Microelectronics, Xi’an Jiaotong University, Xi’an 710049, China
推荐引用方式 GB/T 7714	Wei Mao,Hai-Yong Wang,Peng-Hao Shi,et al. Low specific on-resistance GaN-based vertical heterostructure field effect transistors with nonuniform doping superjunctions.[C]. 见:CHINESE PHYSICS B. 2018.

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