Electrophilic Reaction Mechanism for Alkyl Monolayer Formation Initiated at Isolated Dangling Bonds of the H-GaN (0001) Surface: A Periodic Density Functional Theory Study

	Electrophilic Reaction Mechanism for Alkyl Monolayer Formation Initiated at Isolated Dangling Bonds of the H-GaN (0001) Surface: A Periodic Density Functional Theory Study
	C. L. Hu ; J. Q. Li ; Y. Chen and W. F. Wang
刊名	Journal of Physical Chemistry C
	2008-10
卷号	112 期号:43 页码:16932-16937
关键词	gan(0001) surface adsorption silicon molecules model chemisorption
ISSN号	1932-7447
收录类别	SCI
原文出处	http://pubs.acs.org/doi/pdfplus/10.1021/jp800325f
语种	英语
公开日期	2013-01-22
内容类型	期刊论文
源URL	[http://ir.fjirsm.ac.cn/handle/350002/5478]
专题	福建物质结构研究所_中科院福建物质结构研究所_期刊论文
推荐引用方式 GB/T 7714	C. L. Hu,J. Q. Li,Y. Chen and W. F. Wang. Electrophilic Reaction Mechanism for Alkyl Monolayer Formation Initiated at Isolated Dangling Bonds of the H-GaN (0001) Surface: A Periodic Density Functional Theory Study[J]. Journal of Physical Chemistry C,2008,112(43):16932-16937.
APA	C. L. Hu,J. Q. Li,&Y. Chen and W. F. Wang.(2008).Electrophilic Reaction Mechanism for Alkyl Monolayer Formation Initiated at Isolated Dangling Bonds of the H-GaN (0001) Surface: A Periodic Density Functional Theory Study.Journal of Physical Chemistry C,112(43),16932-16937.
MLA	C. L. Hu,et al."Electrophilic Reaction Mechanism for Alkyl Monolayer Formation Initiated at Isolated Dangling Bonds of the H-GaN (0001) Surface: A Periodic Density Functional Theory Study".Journal of Physical Chemistry C 112.43(2008):16932-16937.