Formation Mechanisms of the Point Defects from the 4H-SiC (0001) surface to the interior layers: First principle calculation | |
Shao, Zhenwei[1]; Xu, Ziwei[2]; Zhang, Xiuyun[3]; Liu, Guiwu[4]; Li, Haohua[5]; Qiao, Guanjun[6] | |
2016 | |
会议名称 | 9th China International Conference on High-Performance Ceramics, CICC 2015 |
会议日期 | 2015-11-04 |
页码 | 771-776 |
收录类别 | EI |
URL标识 | 查看原文 |
内容类型 | 会议论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/5369632 |
专题 | 江苏大学 |
作者单位 | [1]School of Materials Science and Engineering, Jiangsu University, Zhenjiang, 212013, China [2]School of Materials Science and Engineering, Jiangsu University, Zhenjiang, 212013, China [3]School of Physics and Technology, Yangzhou University, Yangzhou, 225002, China [4]School of Materials Science and Engineering, Jiangsu University, Zhenjiang, 212013, China |Suzhou Pant Piezoelectric Tech Co. Ltd., Suzhou, 215300, China[5]School of Materials Science and Engineering, Jiangsu University, Zhenjiang, 212013, China [6]School of Materials Science and Engineering, Jiangsu University, Zhenjiang, 212013, China |
推荐引用方式 GB/T 7714 | Shao, Zhenwei[1],Xu, Ziwei[2],Zhang, Xiuyun[3],et al. Formation Mechanisms of the Point Defects from the 4H-SiC (0001) surface to the interior layers: First principle calculation[C]. 见:9th China International Conference on High-Performance Ceramics, CICC 2015. 2015-11-04. |
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