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Formation Mechanisms of the Point Defects from the 4H-SiC (0001) surface to the interior layers: First principle calculation
Shao, Zhenwei[1]; Xu, Ziwei[2]; Zhang, Xiuyun[3]; Liu, Guiwu[4]; Li, Haohua[5]; Qiao, Guanjun[6]
2016
会议名称9th China International Conference on High-Performance Ceramics, CICC 2015
会议日期2015-11-04
页码771-776
收录类别EI
URL标识查看原文
内容类型会议论文
URI标识http://www.corc.org.cn/handle/1471x/5369632
专题江苏大学
作者单位[1]School of Materials Science and Engineering, Jiangsu University, Zhenjiang, 212013, China [2]School of Materials Science and Engineering, Jiangsu University, Zhenjiang, 212013, China [3]School of Physics and Technology, Yangzhou University, Yangzhou, 225002, China [4]School of Materials Science and Engineering, Jiangsu University, Zhenjiang, 212013, China |Suzhou Pant Piezoelectric Tech Co. Ltd., Suzhou, 215300, China[5]School of Materials Science and Engineering, Jiangsu University, Zhenjiang, 212013, China [6]School of Materials Science and Engineering, Jiangsu University, Zhenjiang, 212013, China
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GB/T 7714
Shao, Zhenwei[1],Xu, Ziwei[2],Zhang, Xiuyun[3],et al. Formation Mechanisms of the Point Defects from the 4H-SiC (0001) surface to the interior layers: First principle calculation[C]. 见:9th China International Conference on High-Performance Ceramics, CICC 2015. 2015-11-04.
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