Effects of reaction-kinetic parameters on modeling reaction pathways in GaN MOVPE growth | |
Zhang, Hong[1]; Zuo, Ran[2]; Zhang, Guoyi[3] | |
刊名 | JOURNAL OF CRYSTAL GROWTH |
2017 | |
卷号 | 478页码:193-204 |
关键词 | Growth models GaN Gas reactions Numerical modeling |
ISSN号 | 0022-0248 |
DOI | http://dx.doi.org/10.1016/j.jcrysgro.2017.08.029 |
URL标识 | 查看原文 |
收录类别 | SCI(E) ; EI |
WOS记录号 | WOS:000413647300031 |
内容类型 | 期刊论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/5348128 |
专题 | 江苏大学 |
作者单位 | 1.[1]Jiangsu Univ, Sch Energy & Power Engn, Zhenjiang, Peoples R China. 2.[2]Jiangsu Univ, Sch Energy & Power Engn, Zhenjiang, Peoples R China. 3.[3]Peking Univ, Sch Phys, Beijing, Peoples R China. |
推荐引用方式 GB/T 7714 | Zhang, Hong[1],Zuo, Ran[2],Zhang, Guoyi[3]. Effects of reaction-kinetic parameters on modeling reaction pathways in GaN MOVPE growth[J]. JOURNAL OF CRYSTAL GROWTH,2017,478:193-204. |
APA | Zhang, Hong[1],Zuo, Ran[2],&Zhang, Guoyi[3].(2017).Effects of reaction-kinetic parameters on modeling reaction pathways in GaN MOVPE growth.JOURNAL OF CRYSTAL GROWTH,478,193-204. |
MLA | Zhang, Hong[1],et al."Effects of reaction-kinetic parameters on modeling reaction pathways in GaN MOVPE growth".JOURNAL OF CRYSTAL GROWTH 478(2017):193-204. |
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