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Effects of reaction-kinetic parameters on modeling reaction pathways in GaN MOVPE growth
Zhang, Hong[1]; Zuo, Ran[2]; Zhang, Guoyi[3]
刊名JOURNAL OF CRYSTAL GROWTH
2017
卷号478页码:193-204
关键词Growth models GaN Gas reactions Numerical modeling
ISSN号0022-0248
DOIhttp://dx.doi.org/10.1016/j.jcrysgro.2017.08.029
URL标识查看原文
收录类别SCI(E) ; EI
WOS记录号WOS:000413647300031
内容类型期刊论文
URI标识http://www.corc.org.cn/handle/1471x/5348128
专题江苏大学
作者单位1.[1]Jiangsu Univ, Sch Energy & Power Engn, Zhenjiang, Peoples R China.
2.[2]Jiangsu Univ, Sch Energy & Power Engn, Zhenjiang, Peoples R China.
3.[3]Peking Univ, Sch Phys, Beijing, Peoples R China.
推荐引用方式
GB/T 7714
Zhang, Hong[1],Zuo, Ran[2],Zhang, Guoyi[3]. Effects of reaction-kinetic parameters on modeling reaction pathways in GaN MOVPE growth[J]. JOURNAL OF CRYSTAL GROWTH,2017,478:193-204.
APA Zhang, Hong[1],Zuo, Ran[2],&Zhang, Guoyi[3].(2017).Effects of reaction-kinetic parameters on modeling reaction pathways in GaN MOVPE growth.JOURNAL OF CRYSTAL GROWTH,478,193-204.
MLA Zhang, Hong[1],et al."Effects of reaction-kinetic parameters on modeling reaction pathways in GaN MOVPE growth".JOURNAL OF CRYSTAL GROWTH 478(2017):193-204.
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