| Method for p-doping of a light-emitting device | |
| GRODZINSKI, PIOTR; LEE, HSING-CHUNG; SHIEH, CHAN-LONG | |
| 1996-08-20 | |
| 著作权人 | MOTOROLA |
| 专利号 | US5547898 |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Method for p-doping of a light-emitting device |
| 英文摘要 | A method for controlling carbon doping levels in a Distributed Bragg Reflectors (DBRs) for a Vertical Cavity Surface Emitting Laser (VCSELs) devices is provided. A first stack of mirrors (105) is deposited on the surface (101) of the substrate (102). A first cladding region (106) is deposited on the first stack of mirrors (105). An active layer (108) is deposited on the first cladding layer (106). A second cladding layer (109) is deposited on the active layer (108). A second stack of mirrors (111) is deposited on the second cladding layer (109) having a carbon doping level controlled by ratio of Group V containing organometallic (tertiarybutylarsine) to Group III organometallics (trimethylgallium and trimethylaluminum). |
| 公开日期 | 1996-08-20 |
| 申请日期 | 1995-09-18 |
| 状态 | 失效 |
| 内容类型 | 专利 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/43152]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MOTOROLA |
| 推荐引用方式 GB/T 7714 | GRODZINSKI, PIOTR,LEE, HSING-CHUNG,SHIEH, CHAN-LONG. Method for p-doping of a light-emitting device. US5547898. 1996-08-20. |
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