Technique for a surface-emitting laser diode with a metal reflector
HORNG, RAY-HUA; WU, DONG-SING; PENG, WEI-CHIH; HO, WEN-JENG; HUANG, YING-SHUN
2003-12-02
著作权人TELECOMMUNICATION LABORATORIES, CHUNGHWA TELECOM CO., LTD.
专利号US6656756
国家美国
文献子类授权发明
其他题名Technique for a surface-emitting laser diode with a metal reflector
英文摘要The present invention is related to a method for fabricating a surface-emitting laser diode with a metal reflector. It is mainly the use of a combination of a metal reflector and wafer bonding technology to replace the traditional epiwafer process or high-temperature high-pressure wafer bonding technology in fabricating VCSEL Bragg Reflector. The metal reflector has high reflectance with its material selected to form ohmic contact with VCSEL material. Besides, the substrate for the metal reflector can be selected for cheap price and good heat dissipation. Further advantages include simple process, low production cost and good VCSEL characteristic etc.
公开日期2003-12-02
申请日期2001-08-24
状态失效
内容类型专利
源URL[http://ir.opt.ac.cn/handle/181661/42540]  
专题半导体激光器专利数据库
作者单位TELECOMMUNICATION LABORATORIES, CHUNGHWA TELECOM CO., LTD.
推荐引用方式
GB/T 7714
HORNG, RAY-HUA,WU, DONG-SING,PENG, WEI-CHIH,et al. Technique for a surface-emitting laser diode with a metal reflector. US6656756. 2003-12-02.
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