Ohmic contacts for p-type wide bandgap II-VI semiconductor materials | |
AHLGREN, WILLIAM L. | |
2001-07-24 | |
著作权人 | RAYTHEON COMPANY |
专利号 | US6265731 |
国家 | 美国 |
文献子类 | 授权发明 |
其他题名 | Ohmic contacts for p-type wide bandgap II-VI semiconductor materials |
英文摘要 | A semiconductor device comprises an active element and contacts that permit low-resistance external electrical connections. The active element includes an active layer formed from group II-VI elements, an n-doped layer on one side of the active it layer, and a p-doped layer on the other side of the active layer. The p-doped layer is a ZnSe-based alloy or a ZnTe-based alloy. There are electrical contacts to the n-doped layer and to the p-doped layer. The electrical contact to the p-doped layer includes a graded-alloy contact layer in epitaxial contact with the p-doped layer and whose bandgap varies from about that of the p-doped layer adjacent the p-doped layer to about zero at a location remote from the p-doped layer. The graded-alloy contact layer is a HgZnSSe-based graded-composition alloy where the p-doped layer is a ZnSe-based alloy, or a HgZnSeTe-based graded-composition alloy where the p-doped layer is a ZnTe-based alloy. |
公开日期 | 2001-07-24 |
申请日期 | 1992-06-03 |
状态 | 失效 |
内容类型 | 专利 |
源URL | [http://ir.opt.ac.cn/handle/181661/42380] ![]() |
专题 | 半导体激光器专利数据库 |
作者单位 | RAYTHEON COMPANY |
推荐引用方式 GB/T 7714 | AHLGREN, WILLIAM L.. Ohmic contacts for p-type wide bandgap II-VI semiconductor materials. US6265731. 2001-07-24. |
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