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	Semiconductor light source with electrically tunable emission wavelength
	BELENKY, GREGORY; BRUNO, JOHN D.; KISIN, MIKHAIL V.; LURYI, SERGE; SHTERENGAS, LEON; SUCHALKIN, SERGEY; TOBER, RICHARD L.
	2011-01-25
著作权人	MAXION TECHNOLOGIES, INC.
专利号	US7876795
国家	美国
文献子类	授权发明
其他题名	Semiconductor light source with electrically tunable emission wavelength
英文摘要	A semiconductor light source comprises a substrate, lower and upper claddings, a waveguide region with imbedded active area, and electrical contacts to provide voltage necessary for the wavelength tuning. The active region includes single or several heterojunction periods sandwiched between charge accumulation layers. Each of the active region periods comprises higher and lower affinity semiconductor layers with type-II band alignment. The charge carrier accumulation in the charge accumulation layers results in electric field build-up and leads to the formation of generally triangular electron and hole potential wells in the higher and lower affinity layers. Nonequillibrium carriers can be created in the active region by means of electrical injection or optical pumping. The ground state energy in the triangular wells and the radiation wavelength can be tuned by changing the voltage drop across the active region.
公开日期	2011-01-25
申请日期	2005-08-18
状态	授权
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/42315]
专题	半导体激光器专利数据库
作者单位	MAXION TECHNOLOGIES, INC.
推荐引用方式 GB/T 7714	BELENKY, GREGORY,BRUNO, JOHN D.,KISIN, MIKHAIL V.,et al. Semiconductor light source with electrically tunable emission wavelength. US7876795. 2011-01-25.

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