| Light emitting device for achieving high luminous efficiency and high saturation level of light output | |
| TERAKADO, TOMOJI | |
| 1994-07-12 | |
| 著作权人 | NEC CORPORATION |
| 专利号 | US5329135 |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Light emitting device for achieving high luminous efficiency and high saturation level of light output |
| 英文摘要 | A light emitting device has an indium gallium arsenide phosphide luminescent layer between a first clad layer of n-type indium phosphide and a second clad layer of p-type indium phosphide, and a strained barrier layer of p-type indium aluminum arsenide is inserted between the luminescent layer and the second clad layer so as to increase the potential barrier therebetween, thereby improving the luminous efficiency and the saturation point of the light output. |
| 公开日期 | 1994-07-12 |
| 申请日期 | 1993-10-21 |
| 状态 | 失效 |
| 内容类型 | 专利 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/42292]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORPORATION |
| 推荐引用方式 GB/T 7714 | TERAKADO, TOMOJI. Light emitting device for achieving high luminous efficiency and high saturation level of light output. US5329135. 1994-07-12. |
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