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	固体レ-ザの製造方法
	松野 明; 楡 孝
	1996-05-31
著作权人	株式会社小松製作所
专利号	JP2524595B2
国家	日本
文献子类	授权发明
其他题名	固体レ-ザの製造方法
英文摘要	PURPOSE:To manufacture a solid state laser with high luminous efficiency and reliability by employing the steps of forming a thin single-crystal layer as a light-emitting layer on a single-crystal substrate, depositing an insulating layer and then a first electrode on the light-emitting layer, etching and depositing an insulating film and then a second electrode on the etched and exposed portions of the light-emitting layer. CONSTITUTION:Electrodes 14 and 17 are formed through insulating films 13 and 16 onto opposite faces of a luminous layer 12 which a luminescence center impurity is doped in the luminescent base metal. At the same time, a solid-state laser is manufactured with other two faces treated as reflecting surfaces 18a and 18b. In such cases, a thin single-crystal film is formed as the luminous layer 12 onto a single-crystal substrate 11 through the epitaxial growth method. Next, the single-crystal substrate 11 is etched from its reverse side to expose the luminous layer 12. The second electrode 17 is formed through the insulating film on the reverse side of the exposed luminous layer 12. For example, the luminous layer 12 is composed by the thin single-crystal film which terbium as the luminescence center impurity is doped in zinc sulphide as the luminescent base metal.
公开日期	1996-08-14
申请日期	1987-06-30
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/42224]
专题	半导体激光器专利数据库
作者单位	株式会社小松製作所
推荐引用方式 GB/T 7714	松野 明,楡 孝. 固体レ-ザの製造方法. JP2524595B2. 1996-05-31.

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