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	Method of fabricating ridge waveguide semiconductor light-emitting device
	HO, JIN-KUO; CHIU, CHIENCHIA; CHENG, CHENN-SHIUNG; CHEN, TSE-JUN
	2001-01-16
著作权人	INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
专利号	US6174747
国家	美国
文献子类	授权发明
其他题名	Method of fabricating ridge waveguide semiconductor light-emitting device
英文摘要	A method of fabricating a ridge waveguide semiconductor light-emitting device is provided in which an oxide semiconductor having a heavy carrier concentration serves as the interface of the metal layer and the epitaxial layer to make the current flow through the ridge waveguide. This invention forms an oxide semiconductor having a heavy carrier concentration thereon after finishing the basic structure of a ridge waveguide semiconductor light-emitting device, then forms a metal layer to conduct current. Since the carrier concentration at the surface of the ridge waveguide is higher than that at the inner portion, the current primarily flows through the interface of the oxide semiconductor having a heavy carrier concentration and the vertex of the ridge waveguide. Thus the current is restricted to only flow through the vertex of the ridge waveguide.
公开日期	2001-01-16
申请日期	1999-03-30
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/42170]
专题	半导体激光器专利数据库
作者单位	INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
推荐引用方式 GB/T 7714	HO, JIN-KUO,CHIU, CHIENCHIA,CHENG, CHENN-SHIUNG,et al. Method of fabricating ridge waveguide semiconductor light-emitting device. US6174747. 2001-01-16.

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