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	High indium containing InGaN substrates for long wavelength optical devices
	SCHMIDT, MATHEW; D'EVELYN, MARK P.
	2012-11-06
著作权人	SORAA, INC.
专利号	US8306081
国家	美国
文献子类	授权发明
其他题名	High indium containing InGaN substrates for long wavelength optical devices
英文摘要	An improved optical device. The device has a gallium nitride substrate member comprising indium entities, gallium entities, and nitrogen entities. In one or more embodiments, the gallium nitride substrate member has an indium content ranging from about 1 to about 50% in weight. Preferably, the gallium nitride substrate member has a semipolar crystalline surface region or a non-polar crystalline surface region. The device has an epitaxially formed laser stripe region comprising an indium content ranging from about 1 to about 50% and formed overlying a portion of the semipolar crystalline orientation surface region or the non-polar crystalline surface region. The laser stripe region is characterized by a cavity orientation in a predefined direction according to a specific embodiment. The laser strip region has a first end and a second end including respective a first cleaved facet provided on the first end of the laser stripe region and a second cleaved facet provided on the second end of the laser stripe region.
公开日期	2012-11-06
申请日期	2010-05-21
状态	授权
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/42105]
专题	半导体激光器专利数据库
作者单位	SORAA, INC.
推荐引用方式 GB/T 7714	SCHMIDT, MATHEW,D'EVELYN, MARK P.. High indium containing InGaN substrates for long wavelength optical devices. US8306081. 2012-11-06.

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