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	Semiconductor laser element having InGaAs compressive-strained quantum-well active layer
	ASANO, HIDEKI
	2007-09-25
著作权人	NICHIA CORPORATION
专利号	US7274720
国家	美国
文献子类	授权发明
其他题名	Semiconductor laser element having InGaAs compressive-strained quantum-well active layer
英文摘要	In a semiconductor laser element, a lower cladding layer, a lower optical waveguide layer, an InGaAs compressive-strain quantum-well active layer, an upper optical waveguide layer, and an upper cladding layer are formed in this order in a stripe-shaped region on a substrate. A current-blocking layer is formed on both sides of the compressive-strain quantum-well active layer so that the compressive-strain quantum-well active layer is sandwiched between two portions of the current-blocking layer, and trenches extending along the direction of the laser resonator are formed through the current-blocking layer. Instead of providing the trenches, the widths of the layers formed above the substrate are reduced so as to form a ridge structure.
公开日期	2007-09-25
申请日期	2005-03-11
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/42025]
专题	半导体激光器专利数据库
作者单位	NICHIA CORPORATION
推荐引用方式 GB/T 7714	ASANO, HIDEKI. Semiconductor laser element having InGaAs compressive-strained quantum-well active layer. US7274720. 2007-09-25.

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