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	Unipolarer Halbleiterlaser
	CAPASSO,FEDERICO; CHO,ALFRED YI; FAIST,JEROME; HUTCHINSON,ALBERT LEE; LURYI,SERGE; SIRTORI,CARLO; SIVCO,DEBORAH LEE
	2000-06-15
著作权人	AT & T CORP.
专利号	DE69510590T2
国家	德国
文献子类	授权发明
其他题名	Unipolarer Halbleiterlaser
英文摘要	This application discloses, a unipolar laser. An exemplary embodiment of the laser was implemented in the GaInAs/AlInAs system and emits radiation of about 4.2 mu m wavelength. Embodiments in other material systems are possible, and the lasers can be readily designed to emit at a predetermined wavelength in a wide spectral region. We have designated the laser the "quantum cascade" (QC) laser. The QC laser comprises a multilayer semiconductor structure that comprises a multiplicity of essentially identical undoped "active" regions (11), a given active region being separated from an adjoining one by a doped "energy relaxation" region (12). The active region comprises one or more quantum wells. In one embodiment of the invention the active region is selected such that a radiative transition from a third to a second energy state substantially is a "diagonal" transition, and in another embodiment the active region is selected such that the radiative transition substantially is a "vertical" one. In the latter case the energy relaxation region advantageously comprises a superlattice Bragg reflector for charge carriers (typically electrons) of energy corresponding to the third energy state.
公开日期	2000-06-15
申请日期	1995-03-29
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/41984]
专题	半导体激光器专利数据库
作者单位	AT & T CORP.
推荐引用方式 GB/T 7714	CAPASSO,FEDERICO,CHO,ALFRED YI,FAIST,JEROME,et al. Unipolarer Halbleiterlaser. DE69510590T2. 2000-06-15.

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