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	Room temperature 3-5 micrometer wavelength HgCdTe heterojunction emitter
	CHEN, MEN-CHEE; BEVAN, MALCOLM J.
	1999-12-07
著作权人	RAYTHEON COMPANY, A CORPORATION OF DELAWARE
专利号	US5998809
国家	美国
文献子类	授权发明
其他题名	Room temperature 3-5 micrometer wavelength HgCdTe heterojunction emitter
英文摘要	A room temperature emitter (10) operating in the 3-5 mu m wavelength range is provided. The emitter (10) includes a substrate (12) formed of a material selected from the group comprising cadmium telluride or cadmium zinc telluride. An epitaxial active layer (14) is formed over the substrate (12) from mercury cadmium telluride. The active layer (14) may be either a p-type or an n-type layer. The active layer (14) is doped with a predetermined concentration of dopant selected from the group comprising indium and arsenic. More particularly, if the active layer (14) is a p-type layer, it is doped with arsenic in a concentration between approximately 1x1016 atoms/cm3 and 1x1017 atoms/cm3. If the active layer (14) is an n-type layer, it is doped with indium in a concentration between approximately 5x1014 atoms/cm3 to 1x1015 atoms/cm3. A first epitaxial confinement layer (16) is formed from mercury cadmium telluride. The first confinement layer (16) is formed over the active layer (14). The first confinement layer (16) may be either an n+layer or a p+layer, depending upon whether the active layer (14) is a p-type or n-type layer. A metal layer (18) is formed over the first confinement layer (16).
公开日期	1999-12-07
申请日期	1996-10-04
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/41951]
专题	半导体激光器专利数据库
作者单位	RAYTHEON COMPANY, A CORPORATION OF DELAWARE
推荐引用方式 GB/T 7714	CHEN, MEN-CHEE,BEVAN, MALCOLM J.. Room temperature 3-5 micrometer wavelength HgCdTe heterojunction emitter. US5998809. 1999-12-07.

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