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	Light emitting devices with layered III-V semiconductor structures, and modules and systems for computer, network and optical communication, using such device
	SATO, SHUNICHI; TAKAHASHI, TAKASHI; JIKUTANI, NAOTO
	2003-12-02
著作权人	RICOH COMPANY, LTD.
专利号	US6657233
国家	美国
文献子类	授权发明
其他题名	Light emitting devices with layered III-V semiconductor structures, and modules and systems for computer, network and optical communication, using such device
英文摘要	A semiconductor light emitting device is disclosed, including a semiconductor substrate, an active region comprising a strained quantum well layer, and a cladding layer for confining carriers and light emissions, wherein the amount of lattice strains in the quantum well layer is in excess of 2% against either the semiconductor substrate or cladding layer and, alternately, the thickness of the quantum well layer is in excess of the critical thickness calculated after Matthews and Blakeslee.
公开日期	2003-12-02
申请日期	2000-12-12
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/41841]
专题	半导体激光器专利数据库
作者单位	RICOH COMPANY, LTD.
推荐引用方式 GB/T 7714	SATO, SHUNICHI,TAKAHASHI, TAKASHI,JIKUTANI, NAOTO. Light emitting devices with layered III-V semiconductor structures, and modules and systems for computer, network and optical communication, using such device. US6657233. 2003-12-02.

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