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	低抵抗n—型硫化亜鉛薄膜の製造方法
	伊藤 直行; 下林 隆; 水本 照之; 岡本 則久
	1994-11-30
著作权人	セイコーエプソン株式会社
专利号	JP1994097651B2
国家	日本
文献子类	授权发明
其他题名	低抵抗n—型硫化亜鉛薄膜の製造方法
英文摘要	PURPOSE:To improve the reproducibility and the mass-productivity by a method wherein, when an N type semiconductor layer to be an active layer or a closed layer of light emitting diode, laser diode etc. is formed, III group elements as donor impurity are contained in single crystal zinc sulfide thin film. CONSTITUTION:When an N type semiconductor thin film is grown on a substrate made of GaAs, GaP and Si etc., the substrate is heated in a heating furnace fed with carrier gas containing material gas to be epitaxially grown. At this time, as for donor impurity, either one of Al, Ga, In or mixture of these elements is contained in single crystal zinc sulfide; or as for zinc source, dialkyl zinc and dialkyl sulfur or an additive produced from equimole mixture of dialkyl selenium are used; and as for sulfur source, hydrogen sulfide is used. Through these procedures, the dependability upon growing temperature may be made excellent enabling to emit dark blue light at room temperature when excited.
公开日期	1994-11-30
申请日期	1985-03-20
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/41793]
专题	半导体激光器专利数据库
作者单位	セイコーエプソン株式会社
推荐引用方式 GB/T 7714	伊藤 直行,下林 隆,水本 照之,等. 低抵抗n—型硫化亜鉛薄膜の製造方法. JP1994097651B2. 1994-11-30.

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