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	Forming indium nitride (InN) and indium gallium nitride (InGaN) quantum dots grown by metal-organic-vapor-phase-epitaxy (MOCVD)
	CHUA, SOO JIN; LI, PENG; HAO, MAOSHENG; ZHANG, JI
	2003-11-11
著作权人	NATIONAL UNIVERSITY OF SINGAPORE, THE
专利号	US6645885
国家	美国
文献子类	授权发明
其他题名	Forming indium nitride (InN) and indium gallium nitride (InGaN) quantum dots grown by metal-organic-vapor-phase-epitaxy (MOCVD)
英文摘要	Indium Nitride (InN) and Indium-rich Indium Gallium Nitride (InGaN) quantum dots embedded in single and multiple InxGa1-xN/InyGa1-yN quantum wells (QWs) are formed by using TMIn and/or Triethylindium (TEIn), Ethyldimethylindium (EDMIn) as antisurfactant during MOCVD growth, wherein the photoluminescence wavelength from these dots ranges from 480 nm to 530 nm. Controlled amounts of TMIn and/or other Indium precursors are important in triggering the formation of dislocation-free QDs, as are the subsequent flows of ammonia and TMIn. This method can be readily used for the growth of the active layers of blue and green light emitting diodes (LEDs).
公开日期	2003-11-11
申请日期	2001-09-27
状态	授权
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/41778]
专题	半导体激光器专利数据库
作者单位	NATIONAL UNIVERSITY OF SINGAPORE, THE
推荐引用方式 GB/T 7714	CHUA, SOO JIN,LI, PENG,HAO, MAOSHENG,et al. Forming indium nitride (InN) and indium gallium nitride (InGaN) quantum dots grown by metal-organic-vapor-phase-epitaxy (MOCVD). US6645885. 2003-11-11.

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