| Method of fabricating semiconductor structures | |
| CHUA, CHRISTOPHER L.; KNEISSL, MICHAEL A.; BOUR, DAVID P. | |
| 2010-05-19 | |
| 著作权人 | XEROX CORPORATION |
| 专利号 | EP1326290B1 |
| 国家 | 欧洲专利局 |
| 文献子类 | 授权发明 |
| 其他题名 | Method of fabricating semiconductor structures |
| 英文摘要 | A method is provided for fabricating a nitride based resonant cavity semiconductor structure with a first distributed Bragg reflector (122) on a sapphire substrate (100), a second substrate (128) bonded to the first distributed Bragg reflector (122), the sapphire substrate (100) removed by laser-assisted epitaxial lift-off, and fabricating a second Bragg reflector (142) on the semiconductor structure opposite the first distributed Bragg reflector. The nitride based resonant cavity semiconductor structure can be a VCSEL, LED or photodetector, or a combination of said devices. |
| 公开日期 | 2010-05-19 |
| 申请日期 | 2002-12-12 |
| 状态 | 授权 |
| 内容类型 | 专利 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/41448]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | XEROX CORPORATION |
| 推荐引用方式 GB/T 7714 | CHUA, CHRISTOPHER L.,KNEISSL, MICHAEL A.,BOUR, DAVID P.. Method of fabricating semiconductor structures. EP1326290B1. 2010-05-19. |
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