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	Vertical cavity surface emitting laser with buried dielectric distributed Bragg reflector
	ZHU, ZUHUA
	2005-04-12
著作权人	GAZILLION BITS, INC.
专利号	US6878958
国家	美国
文献子类	授权发明
其他题名	Vertical cavity surface emitting laser with buried dielectric distributed Bragg reflector
英文摘要	A vertical cavity surface-emitting laser (VCSEL) structure and related fabrication methods are described, the VCSEL comprising amorphous dielectric distributed Bragg reflectors (DBRs) while also being capable of fabrication in a single-growth process. Beginning with a substrate such as InP, a first amorphous dielectric DBR structure is deposited thereon, but is limited in width such that some substrate material remains uncovered by the dielectric material. A lateral overgrowth layer is then formed by epitaxially growing material such as InP onto the substrate, the lateral overgrowth layer eventually burying the dielectric DBR structure as well as the previously-uncovered substrate material. Active layers may then be epitaxially grown on the lateral overgrowth layer, and a top dielectric DBR may be deposited thereon using conventional techniques. To save vertical space between DBRs, the first DBR may be deposited in a non-reentrant well formed in the surface of a substrate. A dual lateral overgrowth method for further reducing dislocations above a lower buried dielectric DBR of a VCSEL is also described.
公开日期	2005-04-12
申请日期	2002-03-26
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/41339]
专题	半导体激光器专利数据库
作者单位	GAZILLION BITS, INC.
推荐引用方式 GB/T 7714	ZHU, ZUHUA. Vertical cavity surface emitting laser with buried dielectric distributed Bragg reflector. US6878958. 2005-04-12.

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