QQ客服 官方微博 反馈留言

	Hetero-integration of dissimilar semiconductor materials
	XIE, YA-HONG
	2002-12-17
著作权人	REGENTS OF THE UNIVERSITY OF CALIFORNIA, THE
专利号	US6495385
国家	美国
文献子类	授权发明
其他题名	Hetero-integration of dissimilar semiconductor materials
英文摘要	A method, structure and article of manufacture related to hetero-integration of dissimilar semiconductor materials. A mask is created on a semiconductor substrate, wherein the mask includes one or more openings, and each of the openings includes one or more overhangs. The overhangs cover a hetero-epitaxial interface region between a film expitaxially grown on the substrate and the substrate itself, thereby preventing a "line-of-sight" view along a surface norm of the substrate in the hetero-epitaxial interface region between the epitaxial film and the substrate. There is only one hetero-epitaxial interface region for each of the openings, which results in only one epitaxial growth front coalescence per opening, thereby reducing the number of highly defective regions from epitaxial growth front coalescence by a factor of two.
公开日期	2002-12-17
申请日期	2000-08-04
状态	授权
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/40157]
专题	半导体激光器专利数据库
作者单位	REGENTS OF THE UNIVERSITY OF CALIFORNIA, THE
推荐引用方式 GB/T 7714	XIE, YA-HONG. Hetero-integration of dissimilar semiconductor materials. US6495385. 2002-12-17.

个性服务

查看访问统计

相关权益政策

暂无数据

收藏/分享

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。