| Group III-V complex vertical cavity surface emitting laser diode and method for manufacturing the same | |
| KIM, TAEK | |
| 2001-10-23 | |
| 著作权人 | SAMSUNG ELECTRONICS CO., LTD. |
| 专利号 | US6306672 |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Group III-V complex vertical cavity surface emitting laser diode and method for manufacturing the same |
| 英文摘要 | A Group III-V complex vertical cavity surface emitting laser (VCSEL) diode manufactured using GaN-system III-V nitride, and a method of manufacturing the same, are provided. The Group III-V complex surface emitting laser diode can obtain a sufficient reflectance even with a small number of pairs of a distributed bragg reflector (DBR), by forming DBRs including air layers. Thus, the crystal growth problem is solved. Also, current confinement and waveguiding are realized by AIN lateral oxidation or etching. |
| 公开日期 | 2001-10-23 |
| 申请日期 | 1998-07-23 |
| 状态 | 失效 |
| 内容类型 | 专利 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/40038]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SAMSUNG ELECTRONICS CO., LTD. |
| 推荐引用方式 GB/T 7714 | KIM, TAEK. Group III-V complex vertical cavity surface emitting laser diode and method for manufacturing the same. US6306672. 2001-10-23. |
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