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	Extended wavelength strained layer lasers having short period superlattices
	JEWELL, JACK L.; TEMKIN, HENRYK
	1998-02-17
著作权人	LUMENTUM OPERATIONS LLC
专利号	US5719895
国家	美国
文献子类	授权发明
其他题名	Extended wavelength strained layer lasers having short period superlattices
英文摘要	Several methods are used in novel ways with newly identified and viable parameters to decrease the peak transition energies of the pseudomorphic InGaAs/GaAs heterostructures. These techniques, taken separately or in combination, suffice to permit operation of light emitting devices at wavelengths of 3 mu m or greater of light-emitting electro-optic devices. These methods or techniques, by example, include: (1) utilizing new superlattice structures having high In concentrations in the active region, (2) utilizing strain compensation to increase the usable layer thickness for quantum wells with appropriately high In concentrations, (3) utilizing appropriately small amounts of nitrogen (N) in the pseudomorphic InGaAsN/GaAs laser structure, and (4) sue of nominal (111) oriented substrates to increase the usable layer thickness for quantum wells with appropriately high In concentrations. In all of the above techniques, gain offset may be utilized in VCSELs to detune the emission energy lower than the peak transition energy, by about 25 meV or even more, via appropriate DBR spacing. Gain offset may also be utilized in some forms of in-plane lasers. Increased temperature may also be used to decrease peak transition energy (and therefore the emission energy) by about 50 meV/100 DEG C. All these techniques are furthermore applicable to other material systems, for example, extending the emission wavelength for laser diodes grown on InP substrates. Additionally, structures which utilize the above techniques are discussed.
公开日期	1998-02-17
申请日期	1996-09-25
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/39937]
专题	半导体激光器专利数据库
作者单位	LUMENTUM OPERATIONS LLC
推荐引用方式 GB/T 7714	JEWELL, JACK L.,TEMKIN, HENRYK. Extended wavelength strained layer lasers having short period superlattices. US5719895. 1998-02-17.

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