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	量子井戸構造をもつ半導体装置
	杉山 芳弘; 北田 秀樹
	1999-08-13
著作权人	富士通株式会社
专利号	JP2964161B2
国家	日本
文献子类	授权发明
其他题名	量子井戸構造をもつ半導体装置
英文摘要	PURPOSE:To rapidly enhance the absorption relaxation time of ecitons while the loss of a light absorption is being suppressed to be low and to adjust the absorption relaxation time of the excitons by a method wherein a quantum well structure laminated and formed on a substrate is divided into pieces or cut into pieces by using a crystal defect layer or a groove. CONSTITUTION:A semiconductor device provided with a quantum well structure is constituted in such a way that a quantum well structure (e.g. MQW 4) laminated and formed on a substrate (e.g. a GaAs substrate 1) is divided by a crystal defect layer (e.g. a damage layer 6) which is larger than a circle using the Bohr radius (e.g. the Bohr radius rB) of two-dimensional excitons as a radius and which is extended to a direction perpendicular to a heterointerface. It is manufactured by the following process. First, a GaAs buffer layer 2, an AlGaAs etching stopper layer 3, the MQW 4 and a GaAs cap layer 5 are grown on the GaAs substrate 1 by a molecular-beam epitaxial growth method. Then, checkered patterns are drawn by using an FIB, and the damage layer 6 is formed. A mask with which the whole face of an epitaxially grown surface is covered is formed on the surface, and a mask is formed selectively on the rear, i.e., the rear of the substrate. The GaAs substrate 1 and the GaAs buffer layer 2 are etched selectively by using an ammonia (NH3)-based etchant.
公开日期	1999-10-18
申请日期	1990-08-31
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/39428]
专题	半导体激光器专利数据库
作者单位	富士通株式会社
推荐引用方式 GB/T 7714	杉山 芳弘,北田 秀樹. 量子井戸構造をもつ半導体装置. JP2964161B2. 1999-08-13.

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