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	Gain and index tailored single mode semiconductor laser
	LACOMB, RONALD BRUCE
	2001-07-03
著作权人	LACOMB RONALD BRUCE
专利号	US6256330
国家	美国
文献子类	授权发明
其他题名	Gain and index tailored single mode semiconductor laser
英文摘要	An index guided semiconductor laser possessing both index tailoring and gain tailoring is provided. Modern semiconductor lasers are fabricated utilizing a suitable material system (such as GaAs-AlGaAs or InP-InGaAsP) heterostructures are formed by crystal growth technologies such as MOCVD to create an active layer providing carrier and optical confinement, a lateral waveguide created by a ridge waveguide and a Fabry-Perot cavity formed from cleaved facets. The semiconductor lasers are configured in diode fashion with p-type and n-type regions between contacts creating current path. Lateral optical confinement is accomplished by a ridge type waveguide formed either by regrowth or etching techniques, designed to possess an index step and index width conducive to supporting two modes (hence index tailored). Lateral gain confinement confining the current density to a thin layer centered in the ridge waveguide. Gain tailoring is employed to offset the confinement factors of the two supported modes, selecting the fundamental mode (hence gain tailoring) creating a wide fundamental mode device capable of high power operation. Current confinement can be accomplished through selective doping of a p-type material in the n-type layers making up the waveguide, or by etching grooves in the material hindering current diffusion or any other current diffusion limiting technique.
公开日期	2001-07-03
申请日期	1997-12-01
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/39185]
专题	半导体激光器专利数据库
作者单位	LACOMB RONALD BRUCE
推荐引用方式 GB/T 7714	LACOMB, RONALD BRUCE. Gain and index tailored single mode semiconductor laser. US6256330. 2001-07-03.

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