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	Complex coupled single mode laser with dual active region
	WITZIGMANN, BERND; TSAI, CHARLES
	2006-05-09
著作权人	EMCORE CORPORATION
专利号	US7042921
国家	美国
文献子类	授权发明
其他题名	Complex coupled single mode laser with dual active region
英文摘要	A semiconductor complex coupled light emitting device is disclosed having a lower cladding layer, an optical cavity formed adjacent the lower cladding layer and an upper cladding layer formed adjacent the optical cavity. The optical cavity includes a lower multi-quantum well active region formed from a first high reactivity material system and an upper multi-quantum well diffraction grating structure formed from a second low reactivity material system that is not subject to oxidation when etched.
公开日期	2006-05-09
申请日期	2003-07-11
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/39106]
专题	半导体激光器专利数据库
作者单位	EMCORE CORPORATION
推荐引用方式 GB/T 7714	WITZIGMANN, BERND,TSAI, CHARLES. Complex coupled single mode laser with dual active region. US7042921. 2006-05-09.

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