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	Semiconductor laser having a high-reflectivity reflector on the laser facets thereof, an optical integrated device provided with the semiconductor laser, and a manufacturing method therefor
	MUKAIHARA, TOSHIKAZU; KASUKAWA, AKIHIKO
	1999-06-22
著作权人	FURUKAWA ELECTRIC CO., LTD., THE
专利号	US5914977
国家	美国
文献子类	授权发明
其他题名	Semiconductor laser having a high-reflectivity reflector on the laser facets thereof, an optical integrated device provided with the semiconductor laser, and a manufacturing method therefor
英文摘要	A reflection multilayer including low-refraction layers and semiconductor layers is formed on the facets of a semiconductor laser. The bandgap energy (Ewg) of a waveguide layer of the reflection multilayer is greater than the bandgap energy (Eac) of an active layer of the semiconductor laser (EacTwg). Further, a photodetector and an optical modulator are formed on the semiconductor laser with the reflection multilayer thereon by butt-Jointing or monolithically by selective vapor growth with use of selective growth masks. Relations Ewg>Emod>Eac>Epd and Twg>Tmod>Tac>Tpd are established between the respective bandgap energies and thicknesses of individual layers, whereby the absorption rate of the reflector waveguide layer and diffraction loss are lowered or reduced, and the rates of optical absorption in an optical absorption layer of the photodetector are increased.
公开日期	1999-06-22
申请日期	1997-10-10
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/38768]
专题	半导体激光器专利数据库
作者单位	FURUKAWA ELECTRIC CO., LTD., THE
推荐引用方式 GB/T 7714	MUKAIHARA, TOSHIKAZU,KASUKAWA, AKIHIKO. Semiconductor laser having a high-reflectivity reflector on the laser facets thereof, an optical integrated device provided with the semiconductor laser, and a manufacturing method therefor. US5914977. 1999-06-22.

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