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	Bond and release layer transfer process
	HENLEY, FRANCOIS J.; KANG, SIEN; ZHONG, MINGYU; LI, MINGHANG
	2018-12-25
著作权人	QMAT, INC.
专利号	US10164144
国家	美国
文献子类	授权发明
其他题名	Bond and release layer transfer process
英文摘要	Embodiments transfer thin layers of material utilized in electronic devices (e.g., GaN for optoelectronic devices), from a donor to a handle substrate. Certain embodiments employ bond-and-release system(s) where release occurs along a cleave plane formed by implantation of particles into the donor. Some embodiments may rely upon release by converting components from solid to liquid under carefully controlled thermal conditions (e.g., solder-based materials and/or thermal decomposition of Indium-containing materials). Some embodiments utilize laser-induced film release processes using epitaxially grown or implanted regions as an optically absorptive region. A single bond-and-release sequence may involve processing an exposed N-face of GaN material. Multiple bond-and-release sequences (involving processing an exposed Ga-face of GaN material) may be employed in series, for example utilizing a temporary handle substrate as an intermediary. Particular embodiments form template blanks of high quality GaN suitable for manufacturing High Brightness-Light Emitting Diode (HB-LED) devices.
公开日期	2018-12-25
申请日期	2017-10-13
状态	授权
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/38693]
专题	半导体激光器专利数据库
作者单位	QMAT, INC.
推荐引用方式 GB/T 7714	HENLEY, FRANCOIS J.,KANG, SIEN,ZHONG, MINGYU,et al. Bond and release layer transfer process. US10164144. 2018-12-25.

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