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	Laser diodes comprising QWI output window and waveguide areas and methods of manufacture
	CHANG, CHWAN-YANG; CHEN, CHIEN-CHIH; HU, MARTIN HAI; NGUYEN, HONG KY; ZAH, CHUNG-EN
	2012-06-12
著作权人	THORLABS QUANTUM ELECTRONICS, INC.
专利号	US8198112
国家	美国
文献子类	授权发明
其他题名	Laser diodes comprising QWI output window and waveguide areas and methods of manufacture
英文摘要	In accordance with one embodiment of the present disclosure, a process of manufacturing a semiconductor laser diode comprising a gain section, a QWI output window, and QWI waveguide areas is provided. The QWI waveguide areas are fabricated using quantum well intermixing and define a QWI waveguide portion in the QWI output window of the laser diode. The QWI output window is transparent to the lasing wavelength λL. The QWI waveguide portion in the QWI output window is characterized by an energy bandgap that is larger than an energy bandgap of the gain section such that the band gap wavelength λQWI in the QWI waveguide portion and the QWI output window is shorter than the lasing wavelength λL. The QWI output window is characterized by a photoluminescent wavelength λPL. The manufacturing process comprises a λPL screening protocol that determines laser diode reliability based on a comparison of the lasing wavelength λL and the photoluminescent wavelength λPL of the QWI output window. Additional embodiments are disclosed and claimed.
公开日期	2012-06-12
申请日期	2010-04-14
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/38523]
专题	半导体激光器专利数据库
作者单位	THORLABS QUANTUM ELECTRONICS, INC.
推荐引用方式 GB/T 7714	CHANG, CHWAN-YANG,CHEN, CHIEN-CHIH,HU, MARTIN HAI,et al. Laser diodes comprising QWI output window and waveguide areas and methods of manufacture. US8198112. 2012-06-12.

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