| Podłoże do wzrostu epitaksjalnego | |
| PERLIN PIOTR; SARZYŃSKI MARCIN; SUSKI TADEUSZ; CZERNECKI ROBERT; LESZCZYŃSKI MICHAŁ | |
| 2016-08-11 | |
| 著作权人 | INSTYTUT WYSOKICH CIŚNIEŃ POLSKIEJ AKADEMII NAUK |
| 专利号 | PL224995B1 |
| 国家 | 波兰 |
| 文献子类 | 授权发明 |
| 其他题名 | Podłoże do wzrostu epitaksjalnego |
| 英文摘要 | A surface of the substrate consists in plurality of neighbouring stripe shaped flat surfaces of a width from 1 to 2000 pm. Longer edges of the flat surfaces are parallel one to another and the planes of these surfaces are disoriented relatively to the crystallographic plane of gallium nitride crystal defined by Miller-Bravais indices (0001 ), (11-22) or (11-20). Disorientation angle of each of the flat surfaces is between 0 and 3 degree and is different for each pair of neighbouring flat surfaces. Substrate according to the invention allows epitaxial growth of a layered AllnGaN structure by MOCVD or MBE method which permits for realization of a non-absorbing mirrors laser diode emitting a light of of the wavelength from 380 to 550 nm and a laser diodes array which may emit simultaneously light of various wavelengths in the range of 380 to 550 nm. |
| 公开日期 | 2017-02-28 |
| 申请日期 | 2010-04-06 |
| 状态 | 未确认 |
| 内容类型 | 专利 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/38521]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | INSTYTUT WYSOKICH CIŚNIEŃ POLSKIEJ AKADEMII NAUK |
| 推荐引用方式 GB/T 7714 | PERLIN PIOTR,SARZYŃSKI MARCIN,SUSKI TADEUSZ,et al. Podłoże do wzrostu epitaksjalnego. PL224995B1. 2016-08-11. |
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